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SUD35N05-26L
Vishay Siliconix
N-Channel 55 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
?
TrenchFET ? Power MOSFETS
I D (A)
V DS (V)
55
R DS(on) ( ? )
0.0200 at V GS = 10 V
0.0260 at V GS = 4.5 V
35
30
a
?
?
?
175 °C Rated Maximum Junction Temperature
Low Input Capacitance
Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
TO-252
Drain Connected to Tab
G
D
G
D
S
Top View
Ordering Information:
SUD35N05-26L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
55
± 20
Unit
V
Continuous Drain Current (T J = 175 °C) b
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T C = 25 °C
T C = 100 °C
T C = 25 °C
T A = 25 °C
I D
I DM
I S
P D
T J , T stg
35
25
80
35
50 c
7.5 b
- 55 to 175
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient b
t ? 10 s
Steady State
R thJA
17
50
20
60
Junction-to-Case
Junction-to-Lead
R thJC
R thJL
2.5
5
3
6
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x1" FR4 board, t ? 10 s.
c. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71443
S12-1360-Rev. C, 11-Jun-12
For more information please contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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